KIOXIA recently announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices. Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device AI, the new devices offer improved performance with greater power efficiency, in a small BGA package.
UFS Ver. 4.1 devices from KIOXIA integrate the company’s innovative BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package. These new UFS devices are built with KIOXIA’s 8th generation BiCS FLASH 3D flash memory. This generation introduces CBA (CMOS directly Bonded to Array) technology – an architectural innovation that marks a step-change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables major gains in power efficiency, performance, and density.
Available in capacities of 256 and 512 GB and 1 TB, they offer performance and power efficiency improvements over the previous generation. Random write speeds are increased by 30%, while random read speeds gain a 45% improvement. There is a 15% improvement in power utilisation when reading and a 20% improvement during writing.
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