New from Infineon Technologies are the highly efficient, fast recovery 650 V Rapid 1 and Rapid 2 silicon diode families.
Combining Infineon’s ultra-thin wafer manufacturing expertise for a low-loss vertical structure plus unique cell design, the diodes fill the gap between silicon carbide (SiC) diodes and emitter-controlled diodes to address the ultrafast and hyperfast power silicon diode markets.
The new devices are targeted for use in high-efficiency applications with switching frequencies between 18 kHz and 100 kHz.
The Rapid 1 diode family has a 1,35 V temperature-stable forward voltage to ensure low conduction losses and provide a soft recovery to keep EMI emissions to a minimum. The devices are well suited for power factor correction (PFC) topologies, typically found in major home appliances, like air conditioners and washing machines, as well as boost stages in photovoltaic inverters, which are switching between 18 kHz and 40 kHz.
The Rapid 2 family is designed for applications switching between 40 kHz and 100 kHz. It offers both low reverse recovery charge and reverse recovery time to minimise reverse conduction effects attributed to power switch turn-on losses, and thus provides maximum efficiency. Rapid 2 is targeted at PFC stages found in servers, telecom rectifiers, TV and laptop power adaptors, and welding machines.
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