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SiC MOSFETs and Schottky diodes
29 May 2019, Power Electronics / Power Management
Microchip Technology announced, via its Microsemi subsidiary, the production release of a family of SiC (silicon carbide) power devices that offer ruggedness and the performance benefits of wide-bandgap technology. These products meet the need to improve system efficiency, robustness and power density in electric vehicles (EVs) and other high-power applications in the industrial, aerospace and defence markets.
Microchip’s 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier diodes (SBDs) join its existing portfolio of SiC power modules. The more than 35 discrete products that have been added to the portfolio are available in volume, supported by comprehensive development services, tools and reference designs, and offered across a range of voltage and current ratings and package types.
The new parts offer efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability. They perform favourably in these unclamped inductive switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage.
The expanded SiC portfolio is supported by a range of SiC SPICE models, SiC driver board reference designs and a power factor correction (PFC) Vienna reference design. All the company’s SiC products are available in production volumes along with their associated support offerings. A variety of die and package options are available.
For more information contact Dirk Venter, Altron Arrow, +27 11 923 9600, dventer@arrow.altech.co.za, www.altronarrow.com |
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