ST Microelectronics has introduced a 200 A version of its advanced family of IGBTs that features low forward-voltage drops at high currents. Such devices belong to the low drop family of ST's IGBTs that ensure low on-voltage losses without using any heavy metal doping or electronic radiation to reduce the lifetime of minority carries.
The parts are designed for use in aluminium welding and induction heating equipment, as well as in UPS and SMPS.
The STGE200NB60S is part of ST's PowerMESH IGBT family, which uses a patented strip layout. 'Mesh overlay' technology is a strip-based high voltage process made up of a P-type mesh structure diffused onto the N-epitaxial layer of an IGBT. The N+ strip that replaces the cells and represents the emitter of the device is then directly diffused onto the P-Mesh layer. The S suffix indicates that this N-channel part has been optimised for low on-voltage drops at operating frequencies of up to 10 kHz. At 600 V and 100 A, VCE(sat) is less than 1 V, at an operating temperature of 100°C. At 200 A and an operating temperature of 25°C, VCE(sat) remains below 1,3 V.
The efficiency of the part's design means power dissipation in conduction is low. The parts are offered in an insulated ISOTOP package that contributes to safety.
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