New MOSFETs feature STripFET III technology
2 July 2003
Analogue, Mixed Signal, LSI
The overall success in the low voltage MOSFET market depends primarily on how closely semiconductor suppliers match the expectations of the electronic industry. The improvement in low voltage MOSFET technology continues at a rapid pace as devices with new geometries or greater densities continue to be introduced.
STMicroelectronics has developed a new generation of its STripFET technology - STripFET III. This process is also known as EHD3 (extremely high density) resulting from the enhanced density of the equivalent cells, well above 57 Mcells/inch2.
EHD3's main feature is the strip width and the inter-strip gaps, which bring a considerable channel perimeter density (W = 62 m/cm2). Also, it features high cell density and channel perimeter; extremely low figure of merit; and optimised intrinsic recovery.
The advantages that come from the built-up cell density and scaled-down features are traceable in featuring one of the lowest on-resistances in the market.
For more information contact Avnet Kopp, 011 809 6100, [email protected], www.avnet.co.za
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