Atmel's AT60142E, a rad-hard SRAM that meets the stringent radiation, performance, size and weight requirements of space applications, is produced on a 0,25 µm CMOS process. A very low power static RAM organised as 512 K x 8 bits, the AT60142E combines rad-hard capabilities (latch-up threshold and a total dose higher than 70-MeV and 300-Krad respectively) with a fast access time of 20 ns over the full military temperature range.
To prevent the occurrence of multiple SEU induced errors in the same byte, Atmel organised the AT60142E memory plan in eight parallel blocks of 512 K x 1. This memory plan allows designers to use simple EDAC systems, improving application performance and minimising development time and complexity.
To optimise power consumption, the chip periphery operates at 3,3 V, while an internal regulator allows the memory cell to operate at 2,5 V. Hence, a single supply voltage is needed at the board level.
For more information contact Arrow Altech Distribution, 011 923 9600, Memec SA, 011 897 8600, or EBV-Electrolink, 021 421 5350.
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