RF LDMOS family optimised for GSM frequencies

25 October 2000 Telecoms, Datacoms, Wireless, IoT

Motorola offers a family of RF LDMOS devices optimised for GSM and EDGE base- station applications. Each device is optimised for the various frequency bands making them easier to design and highly tailored for good performance. The devices are fully characterised and individually tuned to operate at frequencies from 1,8 to 2,0 GHz. Based upon Motorola's fourth generation (HV4) RF LDMOS device technology, the MRF18000 series also provides maximum protection from hot carrier injection effects (<10% Vgs drift over 20 years), while at the same time not sacrificing RF performance. In addition, these devices incorporate input and output matching, making them easier to use and significantly reducing design cycles, as well as board space.

The line-up includes an industry first integrated ESD (electrostatic discharge) protection to simplify handling and reduce overall manufacturing costs associated with assembling ultra-sensitive devices. The 60 W MRF18060A/MRF18060AS device, for example, is qualified as a Class 2, human body model device with a 2350 V rating, and it qualifies as a Class-M3 300 V device for the machine model. No other RF LDMOS device on the market has ever achieved such a high level of ESD protection, according to the manufacturer.

The introduction of a GSM specific family of products continues Motorola's strategy to penetrate its HV4 generation RF LDMOS into all major markets. The first product to be unveiled in the MRF18000 line-up is the MRF18060A/MRF18060AS, a 60 W device operating up to 2,0 GHz. This device (available in package styles with and without the flange) is to be used in Class AB for GSM. The MRF18060B/MRF18060BS and the 90 W MRF18090A/MRF18090AS and MRF18090B/MRF18090BS are suited for class AB for GSM and EDGE cellular radio applications.

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