Smallest GaAs MESFET switch for RF
18 May 2005
Telecoms, Datacoms, Wireless, IoT
A new leadless GaAs MESFET is claimed to be the world's smallest and lowest profile RF single pole dual throw switch. Featuring a frequency range of operation from DC to 3 GHz, Toshiba's TG2217CTB device is a low-profile gallium arsenide (GaAs) metal-semiconductor field effect transistor (MESFET) single pole dual throw (SPDT) switch. It is well-suited for use in multiband/-mode cellular antenna switch modules, Bluetooth modules and wireless LAN (WLAN) applications.
Recently, demand for multiband/-mode antenna switch devices for GSM-based handsets and GPS devices has been increasing, and designers have been looking for smaller, more cost-effective antenna switch solutions. Toshiba says its new RF SPDT is the smallest package currently available for this and also features low insertion loss and high isolation.
The TG2217CTB SPDT switch in leadless 6-pin CSP package measures 1 x 1 x 0,38 mm. Two control positive voltages also act as bias supply. The control voltages are very low and 2,4 V-switching operation is possible. The switch features 0,35 dB insertion loss at 1 GHz (0,40 dB at 2 GHz) and 24 dB isolation at 1 and 2 GHz.
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