Intersil has extended the breakdown voltage of its growing family of UltraFET devices from 150 to 200 V. The 200 V family of UltraFET MOSFETs is designed to improve power supply efficiency and reliability in Internet and network servers, UPS, DC-DC converters and general-purpose load control applications. They are designed to maximise the trade-off between on-resistance Rds(on), gate charge (Qg), and body diode characteristics to improve overall circuit efficiency and power efficiency.
The 200 V UltraFET family features exceptionally low maximum and typical Rds(on) on-resistance values down to 0,071 W at 38 A resulting in lower power losses and higher efficiency. They also provide additional efficiency enhancements through an improved body diode that exhibits lower reverse recovery charge (Qrr) and reverse recovery time (Trr). The new 200 V devices also feature higher switching speeds, enabling engineers to improve overall power efficiency and thermal ratings while minimising PCB space.
The 200 V devices join the growing family of power efficient UltraFET MOSFETs offered by Intersil covering 20, 30, 55, 60, 80, 100, 150 and now 200 V devices.
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