Silicon Storage Technology (SST) has introduced four new members to its ComboMemory product family. On the industry's smallest footprint, the concurrent, dual-bank application-specific memory devices allow for concurrent operations between the two internal flash memory banks and the SRAM. The new ComboMemory product family is comprised of 16 Mbit flash memory and 2 or 4 Mb static random-access memory (SRAM).
The devices are housed in a small, 8 x 10 mm BGA package with stacked-die technology, making them ideal for mobile wireless communications.
A distinguishing feature of the concurrent ComboMemory devices is that data can be read from either bank while an 'erase' or 'program' operation is in progress in the opposite bank. For added design flexibility, the flash memory is partitioned into 4 and 12 Mb banks with top or bottom sector protection options for storing critical boot codes and configuration data. As a result, the flash memory and SRAM architecture provides a new level of flexibility to designers, who can now take advantage of the device's built-in ability to perform multiple concurrent functions.
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