Integrated RF driver and power MOSFET IC

19 September 2007 Telecoms, Datacoms, Wireless, IoT

Ixys has announced that its IxysRF team and wholly owned subsidiary, Directed Energy, have developed a new high efficiency combination RF driver and Power MOSFET in one package. The driver and MOSFET are integrated into an isolated, surface mountable and low inductance RF package. The combination can be operated up to frequencies as high as 40 MHz switching operation for class C, D and E modes.

The IXZ4DF18N50 contains a MOSFET rated at 19 A, 500 V coupled with the DEIC515 driver IC for short propagation delays and accurate switching thresholds. The DEIC515 has been designed with very low propagation delays, with fast switching and high drive current. The propagation delay of approximately 17 ns is reduced by eliminating the level translator in the input circuit. The driver section can be operated from 8 to 24 V. Rise and fall times of less than 2 ns have been observed into a 50 Ω load, making the device useful for high power, short pulse and switching applications.

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