Zetex Semiconductors has introduced a series of miniature NPN and PNP transistors for MOSFET gate driving in latest generation power supplies. Provided in the SOT23FF package, with a footprint of 2,5 mm x 3 mm and an off-board height of just 1 mm, the ZXTN and ZXTP transistors offer low saturation voltage and high current gain hold-up, leading to high circuit efficiency and cool running.
Covering the operating voltage range from 20 V through to 100 V, these transistors are said to drive MOSFET gates faster and more efficiently than CMOS IC alternatives and being immune to latch-up, they offer an improvement in overall system reliability. The use of the SOT23FF package also allows the devices to sit as close as possible to the MOSFET, helping to minimise track inductance and ringing effects.
The 20 V ZXTN19020CFF and ZXTP19020CFF have guaranteed gains of 100 at 7 A and 110 at 5 A respectively. When connected in a common emitter configuration they provide extremely fast switching, with propagation times less than 2 ns and rise and fall times between 10 and 20 ns. With a peak current performance up to 15 A, they offer a highly cost effective alternative to dedicated gate driver ICs.
In saturated switch applications and push-pull topologies used in POL DC -DC modules and emergency lighting, the transistors' low saturation voltage capability provides a significant advantage. As an illustration, the 60 V rated ZXTN19060CFF NPN has a saturation voltage of just 150 mV at 1 A with a base drive of 10 mA, or 135 mV at 2 A and a base drive of 40 mA.
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