Telecoms, Datacoms, Wireless, IoT


500 W LDMOS for L-band radar

21 January 2009 Telecoms, Datacoms, Wireless, IoT

Expanding its portfolio of RF power transistors, NXP Semiconductors has launched its latest laterally diffused metal oxide semiconductor (LDMOS) transistor for L-band radar applications, delivering RF output power of 500 W at frequencies between 1,2 GHz and 1,4 GHz.

Targeted at a wide range of L-band radar applications, the transistor features more than 50% drain efficiency and 17 dB gain. Peak output power is 500 W at 1,4 GHz (100 μs pulse width, 25% duty cycle). The device features overdrive without risk up to 5 dB and pulse droop of 0,2 dB.

Operating from a 50 V supply, the device uses non-toxic packaging and ROHS compliance.

For more information contact Stuart Hanford, Arrow Altech Distribution, +27 (0)11 923 9600, [email protected], www.arrow.altech.co.za



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