Freescale Semiconductor recently introduced three high-performance RF power transistors based on laterally-diffused metal oxide semiconductor (LDMOS) technology. The devices incorporate enhancements that make them easy to integrate into amplifiers while delivering high levels of performance.
For GSM EDGE applications, the MRFE6S9046N operates from 920 to 960 MHz and delivers a 17,8 W average RF power output with 19 dB of gain, up to 42,5% efficiency and EVM of up to 2,1% RMS. It is housed in Freescale’s over-moulded plastic package that is surface-mountable, making it compatible with automated pick-and-place manufacturing, and enhanced internal impedance matching enables manufacturers to more easily accommodate printed circuit board variations. The internal output matching enables a user-friendly terminal impedance at the fundamental frequency, but also includes second and third harmonic terminations for higher efficiency, in line with the theory of Class F amplifiers.
The MRF8S9100H/HS (920 to 960 MHz) and MRF8S18120H/HS (1805 to 1880 MHz) are 28 V devices designed for Class AB and Class C operation in GSM and EDGE systems. In GSM EDGE service, the MRF8S9100H/HS delivers 45 W average power gain of 19,1 dB and efficiency of 44% at 940 MHz, and EVM of 2% RMS. It can also be operated in the GSM 800 band. In GSM EDGE service, the MRF8S18120H/HS delivers 46 W average power gain of 18,2 dB, efficiency of 42% at 1840 MHz and EVM of 1,7% RMS. It also supports operation in the GSM 1900 frequency band.
The MRF8S9100H/HS and MRF8S18120H/HS are housed in rugged air-cavity ceramic packages. All three devices are internally matched to simplify circuit design, are RoHS compliant and contain internal ESD protection circuitry.
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