Low-loss 1200 V IGBTs

3 February 2010 Power Electronics / Power Management

A new series of power transistors from STMicroelectronics is designed to reduce the environmental impact of daily-use equipment such as home appliances, HVAC systems and industrial machines by minimising the two major sources of energy loss in motor-control circuits. The STGW30N120KD and the STGW40N120KD are insulated gate bipolar transistors (IGBTs) that have low energy loss when conducting, like an ordinary IGBT, and also reduce losses while switching.

These IGBTs achieve power savings using ST’s PowerMESH process, and deliver good all-round energy efficiency. Lower switching losses allow a higher operating frequency, which in turn permits smaller and lower-cost components in power control circuits. In addition, the IGBTs’ compact TO-247 package saves component count by also integrating the ultra-fast freewheeling diode required by most circuits.

The 1200 V IGBTs are capable of surviving short circuits lasting up to 10 microseconds, making them resistant to common causes of motor controller failures, such as an error in the gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation. Being rated for 1200 V allows use at high AC line voltages such as 440 V or 480 V. The STGW30N120KD and STGW40N120KD are for applications up to 30 A and 40 A, respectively.

For more information contact Robin Scholes, Avnet Kopp, +27 (0)11 809 6100, [email protected], www.avnet.co.za

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