Avago has announced the latest addition to its family of low-noise, high-gain, high-linearity Gallium Arsenide (GaAs) active bias amplifiers for use in cellular infrastructure applications.
The MGA-633P8 is an easy-to-use monolithic microwave IC (MMIC) low noise amplifier (LNA) with a compact footprint and a common printed circuit board layout which is ideal for front-end applications in cellular base stations. It is designed to be used as a first stage LNA for cellular base station transceiver radio cards, tower mounted amplifiers, combiners, repeaters and remote/digital radio heads.
The MGA-633P8 uses Avago’s proprietary GaAs enhancement-mode pHEMT process to achieve a gain of 18 dB with a noise figure of 0,37 dB. It features input return loss of 15 dB, output IP3 of 37 dB and 22 dBm output power at 1 dB gain compression. Housed in a compact 2 by 2 by 0,75 mm 8-pin quad-flat-no-lead (QFN) package, the device is designed for cellular applications that operate within the 450 to 2000 MHz frequency range. It is well suited for use in line terminal equipment, GSM, CDMA, WCDMA, CDMA2000 and TD-SCDMA cellular infrastructure applications.
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