Cree has developed two new GaN HEMT transistors, expanding the power range and addressable applications of the Cree product family.
The CGH40006P is a 6 W GaN HEMT transistor covering a frequency range of DC through 6 GHz. This transistor is suited to driver and medium power stages within broadband amplifier topologies. In addition, it can be used in low-noise amplifier applications where the ruggedness of GaN HEMTs can lessen the need for protection components typically required in GaAs MESFET low-noise amplifiers.
The CGH31240F is a high-power, class A/B S-band GaN HEMT transistor. It is an internally-matched 240 W packaged device for the 2,7 to 3,1 GHz band and is designed for civil radar applications such as weather and air traffic control, as well as for marine radar. The device, operating at 28 V, offers over 10 dB power gain while providing over 240 W saturated power with greater than 50% power added efficiency using a 300 microsecond, 10% duty cycle pulsed signal.
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Telecoms, Datacoms, Wireless, IoT
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Common switch-mode power supply (SMPS) design errors are discussed, and their appropriate rectification is specified, with details on complications that arise with the power stage design of DC-DC switching regulators.
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Telecoms, Datacoms, Wireless, IoT
One of Mouser’s newest products is the Morse Micro MM6108-MF08651-US Wi-Fi HaLow Module, which adheres to the IEEE 802.11ah standard.
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Telecoms, Datacoms, Wireless, IoT
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To increase security on IoT products and facilitate easier setup and management, Microchip Technology has added the ECC608 TrustMANAGER with Kudelski IoT keySTREAM, Software as a Service (SaaS) to its Trust Platform portfolio of devices, services and tools.
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AI & ML
SolidRun and Hailo has unveiled a game-changer for engineers and AI product developers with the launch of their market-ready SoM, which packs the cutting-edge capabilities of the Hailo-15H SoC.
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