Cree has developed two new GaN HEMT transistors, expanding the power range and addressable applications of the Cree product family.
The CGH40006P is a 6 W GaN HEMT transistor covering a frequency range of DC through 6 GHz. This transistor is suited to driver and medium power stages within broadband amplifier topologies. In addition, it can be used in low-noise amplifier applications where the ruggedness of GaN HEMTs can lessen the need for protection components typically required in GaAs MESFET low-noise amplifiers.
The CGH31240F is a high-power, class A/B S-band GaN HEMT transistor. It is an internally-matched 240 W packaged device for the 2,7 to 3,1 GHz band and is designed for civil radar applications such as weather and air traffic control, as well as for marine radar. The device, operating at 28 V, offers over 10 dB power gain while providing over 240 W saturated power with greater than 50% power added efficiency using a 300 microsecond, 10% duty cycle pulsed signal.
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