Hittite has released a new GaAs InGaP HBT MMIC power amplifier for automotive, broadband, WiMAX and LTE/4G applications from 2,3 to 2,8 GHz.
The HMC755LP4E is a high-gain, high-linearity device rated from 2,3 GHz to 2,8 GHz and provides up to 31 dB of gain. It operates from a single +5 V supply, and achieves 28% power added efficiency (PAE) at +33 dBm of saturated output power. Three power control pins can be used to reduce the RF output power of the PA, or for full power-down of the amplifier to conserve DC power.
The integrated output power detector pin is internally coupled and provides excellent measurement accuracy while requiring only a single external decoupling capacitor. With an OFDM output power of +25 dBm (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2,5%, making it suitable for WiMAX and LTE/4G applications. The amplifier is packaged in a compact 4 x 4 mm QFN SMT package, requires a minimum of external matching components, and is rated for operation from -40°C to +85°C.
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