Telecoms, Datacoms, Wireless, IoT


RF power transistors

19 January 2011 Telecoms, Datacoms, Wireless, IoT

Freescale Semiconductor unveiled three industrial RF LDMOS power transistors targeted at OEMs building industrial and commercial aerospace designs.

The MRFE6VP5600H/S and MRFE6VP61K25H/S 50 V transistors offer enhanced ruggedness to support harsh environments in highly mismatched applications such as plasma generators, CO2 lasers and MRI power amplifiers. They deliver output power levels of 600 W and 1250 W and are capable of handling a voltage standing wave ratio (VSWR) of 65:1 at multiple phase angles.

The MRF8P29300H/S 30 V is designed for pulsed S-band applications such as air traffic control (ATC) and weather radar, and can also support modulated communications applications. It provides a 2700 to 2900 MHz frequency range with pulsed RF output power of 320 W. The device has power gain of 13,3 dB and drain efficiency of 50,5.

For more information contact EBV Electrolink, +27 (0)21 402 1940, [email protected], www.ebv.com



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