National Semiconductor has introduced new full-bridge pulse width modulation (PWM) controllers which integrate all four primary-side bridge MOSFET gate drivers.
The LM5045 and LM5046 are well suited for delivering high efficiency and power density in quarter-brick and eighth-brick power modules used in a variety of high input voltage communications infrastructure applications.
The LM5045 contains all of the features necessary to implement a conventional full-bridge topology power converter using either current mode or voltage mode control. For applications requiring zero-voltage switching (ZVS) to minimise electromagnetic interference (EMI) due to switching noise, the LM5046 contains all the features necessary to implement a phase-shifted full-bridge topology.
Offered in small, thermally enhanced 5 mm by 5 mm by 0,8 mm LLP and 4,4 mm by 9,7 mm by 0,9 mm TSSOP packages, the full-bridge controllers operate on the primary side of an isolated DC-DC converter with input voltage up to 100 V. They provide robust 2 A high- and low-side gate drivers for the four external bridge MOSFETs in addition to the control signals for the secondary side synchronous rectifier MOSFETs and an internal high-voltage startup regulator.
Intelligent startup of the synchronous rectifiers (SR) allows monotonic turn-on of the power converter, even with pre-bias load conditions. The synchronous rectifier control signals offer independent and programmable leading/trailing edge dead-times between the primary and secondary MOSFET control signals for optimal efficiency, and the SR signals are limited to 5 V for use with digital isolators. Additional features include dual mode over-current protection featuring both cycle-by-cycle current limiting and hiccup mode restart, programmable soft-start, timing for both primary and synchronous rectifiers, programmable line UVLO and OVP, a synchronisable 2 MHz oscillator and thermal shutdown.
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