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Infrared emitter
11 May 2011, Opto-Electronics
Vishay has broadened its optoelectronics portfolio with the release of a new 850 nm infrared emitter featuring a parabolic lens for a very narrow ±3° angle of half intensity. Based on a unique surface emitter chip technology, the VSLY5850 offers radiant intensity of 600 mW/sr at a 100 mA drive current, optical power to 55 mW and fast 10 ns switching times.
The surface emitter technology used in the VSLY5850 represents a unique die construction in which all the light generated inside the semiconductor is emitted through the top surface of the chip. This greatly reduces side emissions out of the device’s 5 mm T1¾ plastic package, providing the user with a narrow, well-directed emission beam without disturbing fractions towards the sides.
The device is optimised for IR illumination in CMOS cameras, fire alarm systems and smoke detectors. Its fast switching times also make it ideal for use in high modulation frequency applications for long-range data transmission in road cash systems, traffic controls and licence plate flashing. The emitter offers an operating temperature from –40°C to +85°C and is suitable for high pulse current operation. For more information contact EBV Electrolink, +27 (0)21 402 1940, capetown@ebv.com, www.ebv.com |
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Further reading:
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