Accommodating the future of 4G/LTE small cells, RFHIC has introduced the RTH20007-10 amplifier fabricated using an advanced, high power density Gallium Nitride (GaN) semiconductor process.
This amplifier achieves high efficiency of 43% and powers 7 W over the frequency range from 1930 MHz to 1990 MHz. Integrated with asymmetrical Doherty configurations, it is packaged in a very small form-factor 28 x 19 x 4,8 mm on AIN (aluminium nitride) board which provides excellent thermal dissipation.
Applications include indoor or outdoor small cells, distributed-antenna systems and general-purpose use.
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