Cypress Semiconductor expanded its NOR HyperFlash product line with the qualification of a new 256 Mb memory. The 3,0 V S26KL256S device supports the high-bandwidth, low-pin-count HyperBus interface, and is ideal for high-performance applications that need the highest read bandwidth to enable the fastest boot time for instant-on requirements. Running at frequencies up to 166 MHz, HyperFlash products can achieve Double-Data-Rate (DDR) read bandwidths as high as 333 MBps for 1,8 V products and 200 MBps for 3,0 V products. The 256 Mb device is offered in a 48 mm2 24-ball package, and delivers high reliability and an extended temperature range of -40°C to +125°C.
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