Texas Instruments announced the availability of 600 V gallium nitride (GaN) 70 m field-effect transistor (FET) power stage engineering samples, making it the first semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution.
The new 12 A LMG3410 power stage, coupled with TI’s analog and digital power conversion controllers, enables designers to create smaller, more efficient and higher-performing designs compared to silicon FET-based solutions. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing and renewable energy applications.
With its integrated driver and features such as zero reverse-recovery current, the chip provides reliable performance, especially in hard-switching applications where it can reduce switching losses by as much as 80%. Unlike standalone GaN FETs, the LMG3410 integrates built-in intelligence for temperature, current and under-voltage lockout (UVLO) fault protection.
According to TI, the power stage delivers 50% lower power losses in a totem-pole PFC compared with state-of-the-art silicon-based boost power-factor converters. It also claims the reduced bill of materials (BOM) count and higher efficiency enable a reduction in power supply size of as much as 50%. The new device’s 8 x 8 mm quad flat no-lead (QFN) package decreases power loss, component voltage stress and electromagnetic interference (EMI) compared to discrete GaN solutions.
To support designers who are taking advantage of GaN technology in their power designs, TI is also introducing new products to expand its GaN ecosystem. The LMG5200POLEVM-10, a 48 V to 1 V point-of-load (POL) evaluation module, will include the new TPS53632G GaN FET controller, paired with the 80 V LMG5200 GaN FET power stage. The solution allows for efficiency as high as 92% in industrial, telecom and datacom applications.
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