DSP, Micros & Memory


Highest density 36 bit bidirectional synchronous FIFOs

26 Jan 2000 DSP, Micros & Memory

In a move that will dramatically reduce the board space required for power circuitry in mobile communications and computing products, Vishay Intertechnology is sampling the industry's first power MOSFETs in a leadless, 1206 surface-mount package with a total footprint of 3,05 x 1,80 mm.

The new Vishay Siliconix ChipFET power MOSFETs occupy approximately half the board area required by a leaded TSOP-6, allowing designers to shrink the power management circuitry for cellphones and notebook computers into about half the space previously needed.

Performance improvements with the new ChipFETs are claimed to be significant as well. Compared to TSOP-6 power MOSFETs, on-resistance in the new 1206 ChipFETs has been reduced by as much as 35% and power dissipation has been increased by as much as 25%. On-resistance for the single n-channel Si5404DC, for example, is just 30 mOhm max, with power dissipation of 2,5 W.

With an initial product offering of 10 devices in the 8-pin 1206 package, the new ChipFETs are available in 8, 20 and 30 V versions with operating voltages as low as 1,8 V. Both single and dual devices, including a dual n and p-channel MOSFET in the same package are being offered.





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