MACOM Technology Solutions continues to strengthen its position in high-frequency power solutions with three new Gallium Nitride (GaN) on Silicon Carbide (SiC) high-power amplifiers – each tailored for mission-critical radar and communication systems across X- and Ku-band frequencies.
The CMPA851A050F, operating from 8,5 – 10,5 GHz, delivers 50 W of saturated output power with 29 dB large-signal gain and 35 % power-added efficiency under continuous-wave operation. Designed for both military and commercial radar, its rugged 15 x 15 mm bolt-down flange package ensures superior thermal performance and compact integration for next-generation systems.
At higher frequencies, the CMPA1E1F060F targets Ku-band radar and satellite uplinks from 13,4 – 15,5 GHz. Offering 50 W output, 25 dB gain, and 38 % efficiency, it provides strong linearity with IM3 = -25 dBc, making it ideal for data-link and uplink transmitters that require both power and spectral purity.
Completing the lineup, the CMPA1F1H060F covers 15,4 – 17,7 GHz and produces 60 W of pulsed power at 35 % efficiency, with 25 dB gain and -20 dB input return loss. It is engineered for defence and commercial Ku-band radar applications, offering excellent thermal resistance and performance consistency across temperature and voltage variations.
All three amplifiers leverage MACOM’s proven 0,15 µm GaN-on-SiC process, providing high breakdown voltage, efficiency, and reliability for long-life operation up to 225°C junction temperature. With robust design, strong RF characteristics, and simplified integration, these amplifiers enable customers to meet aggressive SWaP-C targets in modern radar and communication platforms.
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