The CHA8212-99F is a three-stage GaN high-power amplifier (HPA) in the frequency band of 8,5-11,5 GHz. It typically provides 25 W of output power associated to 36% of power added efficiency (PAE). The small signal gain exhibits more than 30 dB, and overall power supply is 28 V/0,84 A (quiescent current).
This circuit is a very versatile amplifier for high-performance systems. It is dedicated to defence applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0,25 µm gate length GaN HEMT process and is available as a bare die.
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