The CMPA2935150S from Macom is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 7 x 7 mm surface-mount (QFN) package.
Typical performance over the range of 2,9 to 3,5 GHz at a temperature of 25°C results in a small signal gain of around 31 dB, with an output power of 53 dBm.
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