Automotive-grade power MOSFETs

11 July 2012 Power Electronics / Power Management

NXP Semiconductors introduced a new family of automotive power MOSFETs based on the company’s Trench 6 technology. Fully AEC-Q101 qualified, the devices have successfully completed extended lifetime testing at 175°C for more than 1600 hours – significantly exceeding Q101 requirements – as well as offering very low PPM levels.

The first products in the new family will be available in D2PAK, at voltage grades of 30 V, 40 V, 60 V, 80 V and 100 V, with excellent RDSon performance across the range. Future Trench 6 releases will be made in all other automotive packages – including NXP’s high-reliability, high-performance Power-SO8 LFPAK56 – as part of a major portfolio expansion to offer complete application flexibility. The range will cover virtually all automotive applications, from simple lamp-driving to the sophisticated needs of power control in powertrain, body and chassis systems.

Trench 6 further enhances switching performance compared to previous generations of TrenchMOS, enabling very low QGD for a given RDSon, which is ideal for DC-DC switching applications in the car. NXP automotive power MOSFETs also offer true logic level variants for every product – a crucial feature that combines low on-resistance performance with threshold voltage tolerance, to ensure that the MOSFET can be fully controlled at high temperatures.

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