Power Electronics / Power Management


High-voltage MOSFETs

1 May 2013 Power Electronics / Power Management

With the new 650 V CoolMOS CFD2, Infineon has launched the second generation of its high-voltage CoolMOS MOSFET family with integrated fast body diode.

The company also marked the occasion of the 3,5 billionth CoolMOS device to come off its production line.

The high-voltage power transistors are designed to raise energy efficiency in an array of applications, such as PC power supplies, servers, solar power inverters, lighting and telecommunications power supplies. These energy-saving chips are now also key components in consumer electronics devices, for instance in flat-screen TVs and games consoles.

The new 650 V CoolMOS CFD2 is the world’s first high-voltage transistor with a drain-source voltage of 650 V and an integrated fast body diode. It exhibits softer commutation behaviour and therefore better EMI characteristics, in addition to the standard benefits of fast switching super-junction MOSFETs like better light load efficiency, reduced gate charge, easy implementation and high reliability.

Infineon expects the greatest market potential for this transistor to be in solar power inverters, server computers, LED lighting and telecommunications equipment.

For more information contact EBV Electrolink, +27 (0)21 402 1940, capetown@ebv.com, www.ebv.com, Electrocomp, +27 (0)11 458 9000, andrew@electrocomp.co.za, www.electrocomp.co.za



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