Peregrine Semiconductor unveiled the UltraCMOS PE42525 and PE426525, the industry’s first RF SOI (silicon on insulator) switches to operate up to 60 GHz. Extending Peregrine’s high-frequency portfolio into frequencies previously dominated by gallium-arsenide (GaAs) technology, both switches deliver high performance in all key RF parameters and have a fast switching speed of only 8 nanoseconds.
The PE42525 is ideal for test and measurement equipment, microwave backhaul solutions and higher frequency switching in 5G systems. The PE426525 boasts an extended temperature range (-55°C to +125°C), making it desirable for harsh-environment applications such as oil-and-gas exploration and other industrial markets.
Supporting a wide frequency range from 9 kHz to 60 GHz, the PE42525 and PE426525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver a very fast switching speed of 8 nanoseconds and RF rise/fall time of 4 nanoseconds. Both switches have low power consumption of 450 nA.
The devices boast high port-to-port isolation, low insertion loss, high power handling, high linearity and ESD protection of 2 kV HBM. At 50 GHz, they exhibit port-to-port isolation of 38 dB and insertion loss of 1,9 dB. The PE42525 and PE426525 are available as a flip-chip die with 500 microns bump pitch.
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