pSemi has introduced the world’s first monolithic, silicon-on-insulator (SOI) Wi-Fi front-end module (FEM) – the PE561221. Ideal for Wi-Fi home gateways, routers and set-top boxes, this module uses a smart bias circuit to deliver a high-linearity signal and excellent long-packet error vector magnitude (EVM) performance.
The PE561221 combines the intelligent integration capabilities of pSemi’s SOI technology and Murata’s expertise in Wi-Fi connectivity solutions and advanced packaging. This 2,4 GHz Wi-Fi FEM integrates a low-noise amplifier (LNA), a power amplifier (PA) and two RF switches (SP4T, SP3T). The monolithic die uses a compact 16-pin, 2 x 2 mm LGA package ideal for either standalone use or in 4 x 4 MIMO and 8 x 8 MIMO modules.
The device is based on pSemi’s UltraCMOS technology platform – a patented, advanced form of SOI. With its outstanding RF and microwave properties, SOI is an ideal substrate for integration. UltraCMOS technology also enables intelligent integration through the ability to integrate RF, digital and analog components on a single die.
Through advanced analog and digital design techniques, the Wi-Fi FEM delivers excellent long-packet EVM performance with less than 0,1 dB of gain drop while operating across the entire -40°C to 85°C temperature range. At -40 dB EVM (MCS9), the output power is +19 dBm with less than 0,05 dB drop in power output after a 4 millisecond packet. The IC delivers enhanced dynamic error vector magnitude (DEVM) and current consumption without requiring digital pre-distortion (DPD), and it has excellent MCS11 performance for 802.11ax applications.
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