CMOS RF switches with GaAs performance

5 March 2008 Telecoms, Datacoms, Wireless, IoT

The BGS12A from Infineon is said to be the world's first CMOS-based RF switch to attain the performance levels of GaAs process technology. The device is a general purpose single-pole double-throw (SPDT) RF switch designed for power levels of up to 20 dBm, with a P -1 dB above 30 dBm. The switch offers high RF performance with an insertion loss of only 0,3 dB at a frequency of 1,0 GHz, low harmonic distortion, good isolation (34 dB at 1,0 GHz) and a switching time of less than 4 μs. The interfaces are protected against 1,5 kV HBM (human body model) ESD. The BGS12A is suitable for use in low- and medium-power applications up to 3 GHz. It is available in a fine-pitch wafer-level package (WLP) with dimensions of only 0,79 x 0,54 mm, which is said to be approximately 60% less printed circuit board (PCB) space than the smallest packaged GaAs RF switch on the market.

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