Telecoms, Datacoms, Wireless, IoT


RFMD adds microwave and millimetre wave components

14 May 2008 Telecoms, Datacoms, Wireless, IoT

RF Micro Devices (RFMD) has expanded its industry-leading RF product portfolio to include microwave and millimetre wave components. The new products include gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) gain blocks and low noise amplifiers (LNAs) targeting the base station, satellite communications and short-haul telecommunications segments of the wireless infrastructure market.

The pHEMT gain blocks are monolithic-microwave integrated circuits (MMICs) targeting the microwave point-to-point communications segment of wireless infrastructure markets. The multipurpose pHEMT amplifier MMICs support all wireless applications in the 1 to 16 GHz frequency range, and applications include gain blocks up to 5 W, satellite communications and point-to-point and point-to-multipoint radio link systems. The pHEMT LNAs are packaged field effect transistors (FETs) supporting low noise and medium-power amplifier applications in the 0,5 to 18 GHz frequency range, and applications include base station systems, terrestrial satellite communications and short-haul telecommunications.



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