RF power transistors target WiMAX systems

25 June 2008 Telecoms, Datacoms, Wireless, IoT

Infineon has announced two new LDMOS RF power transistors targeting wireless infrastructure applications, such as WiMAX, in the 2,5 GHz to 2,7 GHz frequency band.

The PTFA260851E/F 85 W FET features 14 dB gain and 22% efficiency at 16 W average output power, under WiMAX signal conditions, while the PTFA261702E 170 W FET features 15 dB gain and 20% efficiency at 32 W average output power.

The 170 W transistor's architecture provides electrically isolated halves that ease use in Doherty power amplifier applications. The device can also be used in a push-pull configuration for extended bandwidth performance.

Both products are available in lead-free, RoHS-compliant ceramic packages. Operating at 28 V, these transistors provide broadband internal matching, and are capable of handling a 10:1 VSWR (voltage standing wave ratio) at CW (continuous wave) power output and 28 V supply voltage.

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