RF Micro Devices has added three new packaged broadband GaAs pHEMT high-frequency amplifiers to its SUF family of products. The new amplifiers deliver enhanced broadband frequency performance and are applicable for commercial, military and space applications.
Based upon GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, the SUF-1033, -5033 and -8533 packaged broadband amplifiers broaden the SUF family's range of performance by offering multiple high-frequency gain blocks featuring various gain levels across bandwidth in small 3 x 3 mm QFN packaged solutions. Each amplifier also features a single supply voltage, low gain variation versus temperature, and 50 Ω I/O match.
The SUF-1033 operates on 47 mA supply current from DC to 18 GHz and features P1dB (at midband) of 14 dBm and noise figure (at 10 GHz) of 4,8 dB. The SUF-5033 operates on 90 mA supply current from 0,1 to 4 GHz and features P1dB (at midband) of 22 dBm and noise figure (at 10 GHz) of 3,0 dB. The SUF-8533 operates on 58 mA supply current from DC to 12 GHz and features P1dB (at midband) of 16 dBm and noise figure (at 10 GHz) of 4,2 dB. All three modules require 5 V supply.
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