Vishay is expanding its PowerPAIR family of dual asymmetric power MOSFETs for low-voltage DC/DC converter applications with new devices that expand the series’ voltage and package footprint options.
Expanding the portfolio with new footprint options are the 30 V SiZ300DT in the PowerPAIR 3 x 3 mm package and the SiZ910DT in the PowerPAIR 6 x 5 mm. The SiZ300DT targets DC/DC applications handling currents of 10 A and under, while the SiZ910DT is suitable for applications above 20 A.
Three new devices in the PowerPAIR 6 x 3,7 mm package expand the voltage range in this form factor from 20 V up to 30 V. The new SiZ728DT is a 25 V device, while the SiZ790DT integrates an onboard Schottky diode. The SiZ730DT is a 30 V device with very low RDS(on).
Devices in the PowerPAIR family help to simplify the design of highly efficient, synchronous buck, single and multiphase DC/DC converters by providing an optimised combination of two MOSFETs in a single package. Their asymmetric configuration improves performance by allowing the size of the low-side MOSFET to be increased for lower conduction losses. The combination of TrenchFET Gen III technology and the asymmetric nature of PowerPAIR allows Vishay to achieve a maximum on-resistance down to 3 m for the low-side synchronous MOSFET.
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