M/A-COM Technology Solutions announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications.
The MAGX-000035-045000 is a gold-metallised, unmatched GaN on silicon carbide RF power transistor optimised for high-performance applications such as L-band and S-band radar. It provides a typical 55 W of peak output power with 11 dB of power gain and 55% efficiency.
The device is assembled using state of the art design and packaging assembly in a 20,3 x 5,8 mm Cu/Mo/Cu flanged ceramic package. Operating over the DC – 3500 MHz frequency range, it is highly robust with high voltage breakdown and boasting a mean time to failure of 600 years.
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