New from M/A-COM Technology Solutions is the MAGX-100027-100C0P, a wideband transistor optimised for DC – 2,7 GHz operation and built using proprietary 4th-generation GaN (gallium nitride) on silicon process. This HEMT D-mode transistor is suited for defence communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
The MAGX-100027-100C0P supports CW, pulsed and linear operation with output power levels up to 100 W (50 dBm). Featuring 50 V operation, it offers CW operation of 18,3 dB gain at 2,45 GHz, and 70% drain efficiency. For pulsed operation, it boasts 18,4 dB gain at 2,7 GHz and 71% drain efficiency. This 100% RF tested transistor is available in an industry standard plastic package with bolt-down flange.
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