The NPT2018 GaN HEMT (gallium nitride high-electron-mobility transistor) is a wideband transistor optimised for DC to 3,5 GHz operation. This device supports CW, pulsed and linear operation with output power levels up to 12,5 W (41 dBm) in an industry standard surface-mount plastic package.
Made by MACOM Technology Solutions, the NPT2018 is ideally suited for defence communications, land mobile radio, avionics, wireless infrastructure, ISM applications, VHF/UHF and L-/S-band radar. Suitable for both linear and saturated use, the 100% RF-tested device offers 16 dB gain at 2,5 GHz and comes in a lead-free 3 x 6 mm 14-lead PDFN package.
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