The CHA7618-99F is a three-stage GaN high-power amplifier (HPA) in the frequency band 5,5-18 GHz. This United Monolithic Semiconductors HPA typically provides 10 W of output power allied with 20% of power-added efficiency. The circuit exhibits a small-signal gain of more than 30 dB and runs from a power supply of 18 V/0,530 A (quiescent current).
Being a very versatile amplifier for high-performance systems, the CHA7618-99F is targeted at defence applications and is well suited for a wide range of microwave applications and systems. The part is developed on a robust 0,15 µm gate length GaN HEMT process and is available as a bare die.
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