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Fairchild Semiconductor says its SyncFET is the industry's first integrated Schottky and MOSFET in a single die. The manufacturer says that integrating a titanium Schottky barrier diode with a vertical
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Intersil has developed a new exposed paddle or E-pad MOSFET package that enables power supplies to run cooler and more efficiently. Available in a thermally-enhanced 8-lead small outline integrated circuit
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Intersil has released a Power CD-ROM, version 3.2, providing technical details of the company's Discrete Power product portfolio, including metal oxide semiconductor field effect transistors (MOSFETs),
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Intersil has extended the breakdown voltage of its growing family of UltraFET devices from 150 to 200 V. The 200 V family of UltraFET MOSFETs is designed to improve power supply efficiency and reliability
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Four new series of discrete infrared (IR) components, including both emitting and receiving devices have been released by Vishay Intertechnology. The devices are the first from Vishay in a miniaturised
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Intersil has broadened its position in the wireless communications market with a strategic investment in San Diego-based Bluetooth specialist Silicon Wave. Silicon Wave is a leader in designing RF systems-on-a-chip
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Designers of wideband digital modulation systems looking for higher levels of integration can now incorporate a single signal processing solution into their design for the shaping, upconversion and modulation
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Intersil has developed a highly integrated RF power amplifier using advanced silicon germanium (SiGe) technology. The company says this process allows the HFA3983 power amplifier and detector to deliver
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EBV Elektronik is offering what it says is the extremely easy to use HCPL-772x (DIP-8) and HCPL-072x (SO-8) opto-couplers from Agilent Technologies. These devices utilise the latest CMOS IC technology
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